SMT10T01AHT7 product image

Product Detail

SMT10T01AHT7

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsTO263-7L
Download Datasheet

Specifications

Package
TO263-7L
Configuration
N
VDS_Max
100 V
ID
324 A
RDS(ON)_Max @VGS=10V
1.6 mΩ
Automotive (Y/N)
N
VGS(th)_Typ
3 V
RDS(ON)_Typ @VGS=10V
1.3 mΩ
VGS_Max
±20 V
Tj
175 °C
EAS_Max
2016 mJ
Ciss_Typ
9660 pF
Coss_Typ
3476 pF
Crss_Typ
48 pF
Qg_Typ
140 nC
ESD
No
MPQ
800 pcs
MOQ
4000 pcs
App: Motor Drive
Y
App: HF Power
Y
App: General Switch
Y

Package & Schematic

SMT10T01AHT7 package outline, pin configuration and schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT10T01AHT7

100V N-Channel Power MOSFET

Product Summary
V_DS R_DS(ON), max I_D, max
100 V 1.6 mΩ @ V_GS = 10V 324 A

TO263-7L

Features
  • Low On-Resistance
  • Excellent FoM (figure of merit)
  • 100% ∆VDS & UIS & Rg Tested
  • RoHS compliant, HALOGEN FREE
Applications
  • DC/DC in Telecoms and Industrial
  • Synchronous Rectification in SMPS
  • Hard Switching and High Speed Circuit
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT10T01AHT7 TO263-7L 10T01AH 13" Tape&Reel 800
Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage V_DS 100 V
Gate - Source Voltage V_GS ±20 V
Continuous Drain Current (V_GS = 10V) ^(1) I_D T_A = 25°C: 324 A
T_A = 100°C: 229 A
Pulsed Drain Current ^(2) I_DM 1295 A
Single Pulse Avalanche Energy ^(3) E_AS 2016 mJ
Single Pulse Avalanche Current (L = 0.1mH) I_AS 117 A
Power Dissipation ^(4) P_D T_A = 25°C: 326 W
T_A = 100°C: 163 W
Junction & Storage Temperature Range T_J, T_STG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient ^(4) R_θJA 30 38 °C/W
Thermal Resistance, Junction-to-Case ^(5) R_θJC 0.35 0.46 °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = 250µA 100 — — V
Zero Gate Voltage Drain Current I_DSS V_DS = 100V, V_GS = 0V — — 1.0 µA
T_J = 125°C — — 100 µA
Gate-Source Leakage Current I_GSS V_GS = ±20V, V_DS = 0V — — ±100 nA
On Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V_GS(th) V_DS = V_GS, I_D = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance R_DS(on) V_GS = 10V, I_D = 20A — 1.3 1.6 mΩ
Forward Transconductance g_fs V_DS = 5.0V, I_D = 20A — 78 — S
Diodes Forward Voltage V_SD I_S = 2.0A, V_GS = 0V — 0.7 1.2 V
Dynamic Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance C_iss V_DS = 50V, V_GS = 0V, f = 1MHz — 9660 — pF
Output Capacitance C_oss — 3476 — pF
Reverse Transfer Capacitance C_rss — 48 — pF
Gate Resistance R_g V_GS = 0V, V_DS = 0V, f = 1MHz — 2.0 — Ω
Switching Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time t_d(on) V_GS = 10V, V_DS = 50V — 25 — ns
Rise Time t_r I_D = 20A, R_GEN = 3.0Ω — 42 — ns
Turn-Off Delay Time t_d(off) — 87 — ns
Fall Time t_f — 63 — ns
Gate Charge Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (V_GS = 10V) Q_g V_DS = 50V, I_D = 25A — 140 — nC
Total Gate Charge (V_GS = 6.0V) Q_g — 88 — nC
Gate-Source Charge Q_gs V_GS = 10V — 38 — nC
Gate-Drain Charge Q_gd — 27 — nC
Gate Plateau Voltage V_plateau — 4.2 — V
Drain-Source Diode Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time t_rr I_S = 20A, di/dt = 100A/µs — 105 — ns
Body Diode Reverse Recovery Charge Q_rr T_J = 25°C — 394 — nC
Diode Forward Current I_S T_A = 25°C — — 204 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. E_AS condition, T_J=25°C, V_DS=50V, V_GS=10V, L=1.0mH.
  4. This device is tested without external heat sink.
  5. Thermal resistance from junction to soldering point (on the exposed drain pad).
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
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