Specifications
- Tj
- 150 °C
- VDS_Max
- 500 V
- ID_Max
- 9 A
- RDS(ON)_Typ @VGS=10V
- 680 mΩ
- RDS(ON)_Max @VGS=10V
- 800 mΩ
- VGS_Max
- ±30 V
- EAS_Max
- 408 mJ
- Ciss_Typ
- 1135 pF
- Coss_Typ
- 110 pF
- Crss_Typ
- 12 pF
- Qg_Typ
- 23 nC
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMV09N50WFU
500V 9A 0.68Ω N-ch Power MOSFET
Product Summary
| V_DS |
R_DS(ON), max |
I_D, max |
| 500 V |
0.68 Ω @ V_GS = 10V |
9.0 A |
TO252-3L
Features
- Typ RDS(on) 0.68Ω@VGS=10V
- 100% avalanche tested
- RoHS Compliant
Applications
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 3 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMV09N50AFU |
TO252-3L |
09N50AF |
13" Tape&Reel |
2,500 |
Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Units |
| Drain - Source Voltage |
V_DS |
500 |
V |
| Gate - Source Voltage |
V_GS |
±30 |
V |
| Continuous Drain Current (V_GS = 10V) ^(1) |
I_D @ T_A = 25°C |
9.0 |
A |
| Pulsed Drain Current ^(2) |
I_DM |
36 |
A |
| Single Pulse Avalanche Energy ^(3) |
E_AS |
408 |
mJ |
| Power Dissipation |
P_D @ T_A = 25°C |
104 |
W |
| Junction & Storage Temperature Range |
T_J, T_STG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient ^(4) |
R_θJA |
62 |
— |
°C/W |
| Thermal Resistance, Junction-to-Case ^(5) |
R_θJC |
1.2 |
— |
°C/W |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics ^(6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V_(BR)DSS |
V_GS = 0V, I_D = 250µA |
500 |
— |
— |
V |
| Drain-Source Leakage Current |
I_DSS |
V_DS = 500, V_GS = 0V |
— |
— |
1.0 |
µA |
|
|
V_DS = 400, V_GS = 0V |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
I_GSS |
V_GS = ±30V, V_DS = 0V |
— |
— |
±100 |
nA |
On Characteristics ^(6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Gate Threshold Voltage |
V_GS(th) |
V_GS = V_DS, I_D = 250µA |
2.0 |
— |
4.0 |
V |
| Static Drain-Source On-Resistance |
R_DS(on) |
V_GS = 10V, I_D = 4.5A |
— |
0.68 |
0.80 |
Ω |
| Diodes Forward Voltage |
V_SD |
I_S = 9.0A, V_GS = 0V |
— |
— |
1.4 |
V |
Dynamic Characteristics ^(8)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
C_iss |
|
— |
1135 |
— |
pF |
| Output Capacitance |
C_oss |
V_DS = 25V, V_GS = 0V, f = 1.0MHz |
— |
110 |
— |
pF |
| Reverse Transfer Capacitance |
C_rss |
|
— |
12 |
— |
pF |
Switching Characteristics ^(6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Turn-On Delay Time |
t_d(on) |
|
— |
18 |
— |
ns |
| Rise Time |
t_r |
V_DS = 6...10V, V_GS = 400V |
— |
36 |
— |
ns |
| Turn-Off Delay Time |
t_d(off) |
I_D = 9.0A, R_GEN = 25Ω |
— |
70 |
— |
ns |
| Fall Time |
t_f |
|
— |
30 |
— |
ns |
Gate Charge Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge (V_GS = 10V) |
Q_g |
|
— |
23 |
— |
nC |
| Gate-Source Charge |
Q_gs |
V_DS = 250V, I_D = 9.0A |
— |
7.0 |
— |
nC |
| Gate-Drain Charge |
Q_gd |
|
— |
7.0 |
— |
nC |
Drain-Source Diode Characteristics ^(6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Body Diode Recovery Time |
t_rr |
|
— |
276 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Q_rr |
V_DD = 400V, V_GS = 10V |
— |
2.9 |
— |
µC |
| Body Diode Reverse Recovery Current |
I_RM |
I_S = 9.0A, di/dt = 100A/ns |
— |
21 |
— |
A |
| Diode Forward Current |
I_S |
T_J = 25°C |
— |
— |
9.0 |
A |
Notes:
- This current is chip limited, which is calculated based on Rθjc.
- This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
- Defined by design; not subject to production test. E_AS condition: T_J=25°C, V_DD=50V, V_GS=10V, L=10mH, I_AS=9A.
- Device mounted on FR4 substrate PC board with 2oz copper on 1inch square cooling area.
- Thermal resistance from junction to soldering point (on the exposed drain pad).
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
- C_oss is a fixed capacitance that gives the same stored energy as C_oss while V_DS is rising from 0 to 480V.
- C_oss is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 480V.
