Specifications
- Tj
- 150 °C
- VDS_Max
- 500 V
- ID_Max
- 9 A
- RDS(ON)_Typ @VGS=10V
- 680 mΩ
- RDS(ON)_Max @VGS=10V
- 800 mΩ
- VGS_Max
- ±30 V
- EAS_Max
- 408 mJ
- Ciss_Typ
- 1135 pF
- Coss_Typ
- 110 pF
- Crss_Typ
- 12 pF
- Qg_Typ
- 23 nC
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Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMV09N50WFU
500V 9A 0.68Ω N-ch Power MOSFET
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| 500 V |
0.68 Ω @ VGS = 10V |
9.0 A |
TO252-3L
Features
- Typ RDS(on) 0.68Ω@VGS=10V
- 100% avalanche tested
- RoHS Compliant
Applications
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 3 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMV09N50AFU |
TO252-3L |
09N50AF |
13" Tape&Reel |
2,500 |
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Units |
| Drain - Source Voltage |
VDS |
500 |
V |
| Gate - Source Voltage |
VGS |
±30 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID @ TA = 25°C |
9.0 |
A |
| Pulsed Drain Current (2) |
IDM |
36 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
408 |
mJ |
| Power Dissipation |
PD @ TA = 25°C |
104 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
62 |
— |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
1.2 |
— |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
500 |
— |
— |
V |
| Drain-Source Leakage Current |
IDSS |
VDS = 500, VGS = 0V |
— |
— |
1.0 |
µA |
|
|
VDS = 400, VGS = 0V |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±30V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Gate Threshold Voltage |
VGS(th) |
VGS = VDS, ID = 250µA |
2.0 |
— |
4.0 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 4.5A |
— |
0.68 |
0.80 |
Ω |
| Diodes Forward Voltage |
VSD |
IS = 9.0A, VGS = 0V |
— |
— |
1.4 |
V |
Dynamic Characteristics (8)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
Ciss |
|
— |
1135 |
— |
pF |
| Output Capacitance |
Coss |
VDS = 25V, VGS = 0V, f = 1.0MHz |
— |
110 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
12 |
— |
pF |
Switching Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Turn-On Delay Time |
td(on) |
|
— |
18 |
— |
ns |
| Rise Time |
tr |
VDS = 6...10V, VGS = 400V |
— |
36 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
ID = 9.0A, RGEN = 25Ω |
— |
70 |
— |
ns |
| Fall Time |
tf |
|
— |
30 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge (VGS = 10V) |
Qg |
|
— |
23 |
— |
nC |
| Gate-Source Charge |
Qgs |
VDS = 250V, ID = 9.0A |
— |
7.0 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
7.0 |
— |
nC |
Drain-Source Diode Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Body Diode Recovery Time |
trr |
|
— |
276 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
VDD = 400V, VGS = 10V |
— |
2.9 |
— |
µC |
| Body Diode Reverse Recovery Current |
IRM |
IS = 9.0A, di/dt = 100A/ns |
— |
21 |
— |
A |
| Diode Forward Current |
IS |
TJ = 25°C |
— |
— |
9.0 |
A |
Notes:
- This current is chip limited, which is calculated based on Rθjc.
- This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
- Defined by design; not subject to production test. EAS condition: TJ=25°C, VDD=50V, VGS=10V, L=10mH, IAS=9A.
- Device mounted on FR4 substrate PC board with 2oz copper on 1inch square cooling area.
- Thermal resistance from junction to soldering point (on the exposed drain pad).
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
- Coss is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480V.
- Coss is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 480V.
